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1

150â200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers

Chien, Feng-Tso, Wang, Zhi-Zhe, Lin, Cheng-Li, Kang, Tsung-Kuei, Chen, Chii-Wen, Chiu, Hsien-Chin

Journal:

Year:

2020

File:

PDF, 554 KB

2020

2

High-performance, micromachined GaN-on-Si high-electron-mobility transistor with backside diamondlike carbon/titanium heat-dissipation layer

Chiu, Hsien-Chin, Yang, Chih-Wei, Wang, Hsiang-Chun, Kao, Hsuan-Ling, Chen, Nai-Chuan, Chien, Feng-Tso, Kan, Ming-Chi

Journal:

Applied Physics Express

Year:

2015

Language:

english

File:

PDF, 1.34 MB

english, 2015

3

A novel thin-film transistor with step gate-overlapped lightly doped drain and raised source/drain design

Chien, Feng-Tso, Chen, Jian-Liang, Chen, Chien-Ming, Chen, Chii-Wen, Cheng, Ching-Hwa, Chiu, Hsien-Chin

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 959 KB

english, 2017

4

A low insertion loss GaAs pHEMT switch utilizing dual n+-doping AlAs etching stop layers design

Feng-Tso Chien, Da-Wei Lin, Chih-Wei Yang, Jeffrey S. Fu, Hsien-Chin Chiu

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 453 KB

english, 2010

5

Novel GaAs enhancement-mode/depletion-mode pHEMTs technology using high-k praseodymium oxide interlayer

Chao-Hung Chen, Hsien-Chin Chiu, Chih-Wei Yang, Jeffrey S. Fu, Feng-Tso Chien

Journal:

Microelectronics Reliability

Year:

2012

Language:

english

File:

PDF, 492 KB

english, 2012

6

Investigation on the thermal behavior of 0.15 μm gate-length In0.4Al0.6As/In0.4Ga0.6As MHEMT

Che-Kai Lin, Hsien-Chin Chiu, Chao-Wei Lin, Hsuan-ling Kao, Feng-Tso Chien

Journal:

Microelectronics Reliability

Year:

2012

Language:

english

File:

PDF, 673 KB

english, 2012

7

A Kink-Effect-Free Poly-Si Thin-Film Transistor With Current and Electric Field Split Structure Design

Feng-Tso Chien, Yi-Ju Chen

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.41 MB

english, 2010

8

[IEEE 2007 European Conference on Power Electronics and Applications - Aalborg, Denmark (2007.09.2-2007.09.5)] 2007 European Conference on Power Electronics and Applications - A novel high channel density trench power MOSFETs design by asymmetric wing-cell structure

Feng-Tso Chien,, Chien-Nan Liao,, Yao-Tsung Tsai,

Year:

2007

Language:

english

File:

PDF, 653 KB

english, 2007

9

Low frequency noise in field-plate multigate AlGaN/GaN single-pole–single-throw RF switches on silicon substrate

Chiu, Hsien-Chin, Lin, Chao-Wei, Huang, Fan-Hsiu, Kao, Hsuan-Ling, Chien, Feng-Tso, Chuang, Hao-Wei, Chang, Kuo-Jen, Gau, Yau-Tang

Journal:

Microelectronics Reliability

Year:

2013

Language:

english

File:

PDF, 506 KB

english, 2013

10

Sidewall defects of AlGaN/GaN HEMTs evaluated by low frequency noise analysis

Chiu, Hsien-Chin, Chen, Chao-Hung, Kao, Hsuan-Ling, Chien, Feng-Tso, Weng, Ping-Kuo, Gau, Yan-Tang, Chuang, Hao-Wei

Journal:

Microelectronics Reliability

Year:

2013

Language:

english

File:

PDF, 597 KB

english, 2013

11

Low gate interface traps AlGaN/GaN HEMTs using a lattice matched ZrZnO transparent gate design

Chiu, Hsien-Chin, Wang, Hsiang-Chun, Lin, Chao-Wei, Luo, Yi-Cheng, Kao, Hsuan-Ling, Chien, Feng-Tso, Weng, Ping-Kuo, Gau, Yan-Tang, Chuang, Hao-Wei

Journal:

Microelectronics Reliability

Year:

2013

Language:

english

File:

PDF, 1.35 MB

english, 2013

12

Device characteristics of AlGaN/GaN MIS–HEMTs with high-k HfxZr1−xO2 (x=0.66,0.47,0.15) insulator layer

Chiu, Hsien-Chin, Wu, Chia-Hsuan, Chi, Ji-Fan, Chien, Feng-Tso

Journal:

Microelectronics Reliability

Year:

2014

Language:

english

File:

PDF, 802 KB

english, 2014

13

High thermal stability and low hysteresis dispersion AlGaN/GaN MOS-HEMTs with zirconia film design

Chen, Chao-Hung, Chiu, Hsien-Chin, Chien, Feng-Tso, Chuang, Hao-Wei, Chang, Kuo-Jen, Gau, Yau-Tang

Journal:

Microelectronics Reliability

Year:

2012

Language:

english

File:

PDF, 583 KB

english, 2012

14

[IEEE 2008 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Hong Kong, China (2008.12.8-2008.12.10)] 2008 IEEE International Conference on Electron Devices and Solid-State Circuits - A low insertion loss GaAs pHEMT switch utilizing highly n+-doping AlAs etching stop layer design

Da-Wei Lin,, Feng-Tso Chien,, Chih-Wei Yang,, Hsien-Chin Chiu,

Year:

2008

Language:

english

File:

PDF, 524 KB

english, 2008

15

The ESD protection characteristic and low-frequency noise analysis of GaN Schottky barrier diode with fluorine-based plasma treatment

Chiu, Hsien-Chin, Chi, Ji-Fan, Kao, Hsuan-Ling, Chu, Chia-Yi, Cho, Kuan-Liang, Chien, Feng-Tso

Journal:

Microelectronics Reliability

Year:

2016

Language:

english

File:

PDF, 1.08 MB

english, 2016

16

[IEEE 2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) - Taipei, Taiwan (2019.5.23-2019.5.25)] 2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) - The Demonstration of Recessed Anodes AlGaN/GaN Schottky Barrier Diodes Using Microwave Cyclic Plasma Oxidation/Wet Etching Techniques

Hsueh, Kuang-Po, Wang, Hao-Yu, Chiu, Hsien-Chin, Wang, Hsiang Chun, Kao, Hsuan-Ling, Chien, Feng-Tso

Year:

2019

Language:

english

File:

PDF, 846 KB

english, 2019

17

Monolithically integrated optoelectronic receivers by AlGaAs/InGaAs doped-channel heterostructures

Feng-Tso Chien, Ching-Wei Kuo, Yi-Jen Chan

Journal:

Microwave and Optical Technology Letters

Year:

2000

Language:

english

File:

PDF, 103 KB

english, 2000

18

A comparison study of CMOS T/R switches using gate/source-terminated field-plate transistors

Chien-Cheng Wei, Hsien-Chin Chiu, Shao-Wei Lin, Ting-Huei Chen, Jeffrey S. Fu, Feng-Tso Chien

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 651 KB

english, 2010

19

Changes in optical and electrical properties and surface recombination velocity of n-type GaN due to (NH4)2Sx treatment

Yow-Jon Lin, Wen-Xiang Lin, Ching-Ting Lee, Feng-Tso Chien

Journal:

Solid State Communications

Year:

2006

Language:

english

File:

PDF, 114 KB

english, 2006

20

Improved voltage gain of transimpedance amplifier by AlGaAs/InGaAs doped-channel FET's

Feng-Tso Chien, Yi-Jen Chan

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 103 KB

english, 1999

21

High-Performance Double-Channel Poly-Silicon Thin-Film Transistor With Raised Drain and Reduced Drain Electric Field Structures

Feng-Tso Chien, Chien-Nan Liao, Chin-Mu Fang, Yao-Tsung Tsai

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 973 KB

english, 2009

22

A New RSD Poly-Si Thin Film Transistor With Inside Spacer Design

Feng-Tso Chien, Ming-Che Chang

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 652 KB

english, 2010

23

Bandwidth enhancement of transimpedance amplifier by a capacitive-peaking design

Feng-Tso Chien, Yi-Jen Chan

Journal:

IEEE Journal of Solid-State Circuits

Year:

1999

Language:

english

File:

PDF, 107 KB

english, 1999

24

Characterization of enhancement-mode AlGaN/GaN high electron mobility transistor using N2O plasma oxidation technology

Chiu, Hsien-Chin, Yang, Chih-Wei, Chen, Chao-Hung, Fu, Jeffrey S., Chien, Feng-Tso

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 1009 KB

english, 2011

25

Improved AlGaAs/InGaAs HFETs due to double doped-channel design

Chien, Feng-Tso, Chan, Yi-Jen

Journal:

Electronics Letters

Year:

1999

Language:

english

File:

PDF, 286 KB

english, 1999

26

Voltage-controlled oscillator phase-noise improvement using a GaAs 0.5 µm Pt-buried gate enhancement-mode pHEMT

Chiu, Hsien-Chin, Ke, Po-Yu, Kuo, Che-Yu, Fu, Jeffrey S, Yang, Chih-Wei, Chien, Feng-Tso

Journal:

Semiconductor Science and Technology

Year:

2009

Language:

english

File:

PDF, 703 KB

english, 2009

27

Characteristics of AlGaN/GaN HEMTs With Various Field-Plate and Gate-to-Drain Extensions

Hsien-Chin Chiu,, Chih-Wei Yang,, Hsiang-Chun Wang,, Fan-Hsiu Huang,, Hsuan-Ling Kao,, Feng-Tso Chien,

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 2.13 MB

english, 2013

28

Poly Si Nanowire Thin Film Transistors With Vacuum Gap Design

Kang, Tsung-Kuei, Yang, Ysung-Yu, Chien, Feng-Tso

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 2.83 MB

english, 2014

29

MEDICAL FEES AT INSURANCE OFFICES.

Chiu, Hsien-Chin, Wang, Hsiang-Chun, Lin, Chao-Wei, Luo, Yi-Cheng, Kao, Hsuan-Ling, Chien, Feng-Tso, Weng, Ping-Kuo, Gau, Yan-Tang, Chuang, Hao-Wei

Journal:

Year:

1849

Language:

english

File:

PDF, 198 KB

english, 1849

30

An investigation of device reliability for a micro-machined AlGaN/GaN/Si high electron mobility transistor using low frequency noise measurement

Chiu, Hsien-Chin, Wang, Hsiang-Chun, Wu, Chia-Hsuan, Huang, Fan-Hsiu, Kao, Hsuan-Ling, Chien, Feng-Tso

Journal:

Microelectronic Engineering

Year:

2014

Language:

english

File:

PDF, 838 KB

english, 2014

31

A Novel Self-Aligned Double-Channel Polysilicon Thin-Film Transistor

Chien, Feng-Tso, Chen, Chii-Wen, Lee, Tien-Chun, Wang, Chi-Ling, Cheng, Ching-Hwa, Kang, Tsung-Kuei, Chiu, Hsien-Chin

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 935 KB

english, 2013

32

[IEEE 2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) - Kyoto, Japan (2014.7.2-2014.7.4)] 2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) - A novel poly-Si thin film transistor with ONO offset structure

Liou, Kun-Ye, Chien, Feng-Tso

Year:

2014

Language:

english

File:

PDF, 815 KB

english, 2014

33

[IEEE 2010 15th Asia and South Pacific Design Automation Conference ASP-DAC 2010 - Taipei, Taiwan (2010.01.18-2010.01.21)] 2010 15th Asia and South Pacific Design Automation Conference (ASP-DAC) - Dynamic voltage domain assignment technique for low power performance manageable cell based design

Lee, Elone, Feng-Tso Chien,, Ching-Hwa Cheng,, Jiun-In Guo,

Year:

2010

Language:

english

File:

PDF, 319 KB

english, 2010

34

[IEEE 2010 15th Asia and South Pacific Design Automation Conference ASP-DAC 2010 - Taipei, Taiwan (2010.01.18-2010.01.21)] 2010 15th Asia and South Pacific Design Automation Conference (ASP-DAC) - Fine resolution double edge clipping with calibration technique for built-in at-speed delay testing

Chen-I Chung,, Shuo-Wen Chang,, Feng-Tso Chien,, Cheng, Ching-Hwa

Year:

2010

Language:

english

File:

PDF, 278 KB

english, 2010

35

Device linearity improvement of In 0.49 Ga 0.51 P/In 0.15 Ga 0.85 As doped-channel FETs with a metal plug alloy process

Chien, Feng-Tso, Liao, Chien-Nan, Yin, Jin-Mu, Chiu, Hsien-Chin, Tsai, Yao-Tsung

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 393 KB

english, 2008

36

Improved device linearity of AlGaAs/InGaAs HFETs by a second mesa etching

Hsien-Chin Chiu,, Shih-Cheng Yang,, Feng-Tso Chien,, Yi-Jen Chan,

Journal:

IEEE Electron Device Letters

Year:

2002

Language:

english

File:

PDF, 86 KB

english, 2002

37

A Novel High-Performance Poly-Silicon Thin-Film Transistor With a Double-Channel Structure

Chien, Feng-Tso, Fang, Chin-Mu, Liao, Chien-Nan, Chen, Chii-Wen, Cheng, Ching-Hwa, Tsai, Yao-Tsung

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 394 KB

english, 2008

38

[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - A novel LTPS-TFT-based charge-trapping memory device with field-enhanced nanowire structure

Liao, Ta-Chuan, Sheng-Kai Chen,, Yu, Ming H., Chun-Yu Wu,, Kang, Tsung-Kuei, Feng-Tso Chien,, Yen-Ting Liu,, Chia-Min Lin,, Cheng, Huang-Chung

Year:

2009

Language:

english

File:

PDF, 468 KB

english, 2009

39

[IEEE Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM - Nara, Japan (14-18 May 2001)] Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) - A capacitive peaking of InGaP/GaAs HBT transimpedance amplifier

Shih-Cheng Yang,, Chin-Wei Kuo,, Feng-Tso Chien,, Yi-Jen Chan,

Year:

2001

Language:

english

File:

PDF, 318 KB

english, 2001

40

A Novel Self-Aligned Raised Source/Drain Polysilicon Thin-Film Transistor With a High-Current Structure

Chien, Feng-Tso, Chen, Chii-Wen, Liao, Chien-Nan, Lee, Tien-Chun, Wang, Chi-Ling, Cheng, Ching-Hwa, Chiu, Hsien-Chin, Tsai, Yao-Tsung

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 428 KB

english, 2011

41

Investigation of impact ionization and flicker noise properties in indium aluminum arsenide/indium gallinum arsenide metamorphic high electron mobility transistors with various work function-gate metals

Chiu, Hsien-Chin, Wu, Chia-Hsuan, Lin, Che-Kai, Chien, Feng-Tso

Journal:

Materials Science in Semiconductor Processing

Year:

2015

Language:

english

File:

PDF, 936 KB

english, 2015

42

[IEEE 2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) - Kyoto, Japan (2014.7.2-2014.7.4)] 2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) - High performance raised source/drain thin film transistor with field plate design

Lin, Kuan-Ting, Chien, Feng-Tso

Year:

2014

Language:

english

File:

PDF, 1.35 MB

english, 2014

43

Microwave power performance comparison between single and dual doped-channel design in AlGaAs/InGaAs HFETs

Feng-Tso Chien,, Shien-Chin Chiol,, Yi-Jen Chan,

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 102 KB

english, 2000

44

[IEEE Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) - Davos, Switzerland (16-20 May 1999)] Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) - Gain linearity and bandwidth improvement of InP-based transimpedance amplifiers by feedback loop designs

Feng-Tso Chien,, Yi-Jen Chan,

Year:

1999

Language:

english

File:

PDF, 322 KB

english, 1999

45

Induced changes in surface band bending of n-type and p-type AlGaN by oxidation and wet chemical treatments

Lin, Yow-Jon, Chu, Yow-Lin, Lin, Wen-Xiang, Chien, Feng-Tso, Lee, Chi-Sen

Journal:

Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 298 KB

english, 2006

46

Nitrogen-vacancy-related defects and Fermi level pinning in n-GaN Schottky diodes

Lin, Yow-Jon, Ker, Quantum, Ho, Ching-Yao, Chang, Hsing-Cheng, Chien, Feng-Tso

Journal:

Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 293 KB

english, 2003

47

[IEEE 2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) - Kyoto, Japan (2014.7.2-2014.7.4)] 2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) - High performance four-masks GOLDD TFT structure without additional ion implantation

Chen, Chien-Ming, Chien, Feng-Tso

Year:

2014

Language:

english

File:

PDF, 847 KB

english, 2014

48

Investigation of degradation for ohmic performance of oxidized Au/Ni/Mg-doped GaN

Lin, Yow-Jon, Li, Zhen-Dao, Hsu, Chou-Wei, Chien, Feng-Tso, Lee, Ching-Ting, Shao, Sheng-Tien, Chang, Hsing-Cheng

Journal:

Applied Physics Letters

Year:

2003

Language:

english

File:

PDF, 239 KB

english, 2003

49

[IEEE 2001 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Phoenix, AZ, USA (20-22 May 2001)] 2001 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium (IEEE Cat. No.01CH37173) - Reduced intermodulation distortion of AlGaAs/InGaAs doped-channel FETs by air-bridge gate process

Hsien-Chin Chiu,, Feng-Tso Chien,, Shih-Cheng Yang,, Yi-Jen Chan,

Year:

2001

Language:

english

File:

PDF, 300 KB

english, 2001

50

Nonalloyed ohmic contact formation in Ti/Al contacts to n-type AlGaN

Lin, Yow-Jon, Chien, Feng-Tso, Lee, Ching-Ting, Lin, Chi-Shin, Liu, Yang-Chun

Journal:

Journal of Physics D Applied Physics

Year:

2008

Language:

english

File:

PDF, 184 KB

english, 2008